Fluctuation Resistant FinFET

摘要

This improved, fluctuation resistant FinFET, with a doped core and lightly doped epitaxial channel region between that core and the gate structure, is confined to the active-gate span because it is based on a channel structure having a limited extent. The improved structure is capable of reducing FinFET random doping fluctuations when doping is used to control threshold voltage, and the channel structure reduces fluctuations attributable to doping-related variations in effective channel length. Further, the transistor design affords better source and drain conductance when compared to prior art FinFETs. Two representative embodiments of the key structure are described in detail.

主权项

1. A FinFET transistor comprising, in the direction of charged carrier flow, a source region, a spacer region, a channel region, a second spacer region and a drain region,
wherein the channel region comprises a fin with a doped core, a sheath of single crystal semiconductor, a gate dielectric structure covering the sheath and a conductive gate covering the gate dielectric, wherein the channel region has boundaries perpendicular to the length of the elongated fin in the channel region that are essentially coplanar with a face of each of the spacer regions.