| 发明名称 |
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE |
| 摘要 |
A method of manufacturing a semiconductor device is presented. The method includes providing a semiconductor layer comprising silicon carbide, wherein the semiconductor layer comprises a first region doped with a first dopant type. The method further includes implanting the semiconductor layer with a second dopant type using a single implantation mask and a substantially similar implantation dose to form a second region and a junction termination extension (JTE) in the semiconductor layer, wherein the implantation dose is in a range from about 2×1013 cm−2 to about 12×1013 cm−2. Semiconductor devices are also presented. |
| 申请公布号 |
US2015008446(A1) |
申请公布日期 |
2015.01.08 |
| 申请号 |
US201313933366 |
申请日期 |
2013.07.02 |
| 申请人 |
General Electric Company |
发明人 |
Losee Peter Almern;Bolotnikov Alexander Viktorovich;Kennerly Stacey Joy |
| 分类号 |
H01L21/04;H01L29/16 |
主分类号 |
H01L21/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
providing a semiconductor layer comprising silicon carbide, wherein the semiconductor layer comprises a first region doped with a first dopant type; and implanting the semiconductor layer with a second dopant type using a single implantation mask and a substantially similar implantation dose to form a second region and a junction termination extension (JTE) in the semiconductor layer, wherein the second region is a p-well region or a base region; wherein the implantation dose is in a range from about 2×1013 cm−2 to about 12×1013 cm−2. |
| 地址 |
Schenectady NY US |
