| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor designed so that a semiconductor layer and a protection layer are formed in accurate alignment and transistor elements can be separated in a simple process.SOLUTION: The thin film transistor comprises: a substrate; a gate electrode formed on the substrate; a gate insulator layer formed on the substrate and the gate electrode; a semiconductor layer formed on the gate insulator layer; a source electrode and a drain electrode formed on the insulation layer and the semiconductor layer; and a striped protection layer formed on the gate insulator layer, the semiconductor layer, the source electrode, and the drain electrode and over a plurality of transistors. Both ends of the semiconductor layer, which define its length in a direction orthogonal to the direction of current flowing in a channel part between the source electrode and the drain electrode, coincide with both ends of the protection layer, which defines a stripe width. The direction in which the stripe is formed in the protection layer is parallel to the direction of a current flowing in the channel part. |
