发明名称 WRITE OPERATIONS FOR DEFECT MANAGEMENT IN NONVOLATILE MEMORY
摘要 Data that is stored in a higher error rate format in a nonvolatile memory is backed up in a lower error rate format. Data to be stored may be transferred once to on-chip data latches where it is maintained while it is programmed in both the high error rate format and the low error rate format without being resent to the nonvolatile memory. Storage to a block in the high error rate format may be suspended to allow read out of a previously written high error rate block for error checking (post-write read).
申请公布号 WO2015002897(A1) 申请公布日期 2015.01.08
申请号 WO2014US44937 申请日期 2014.06.30
申请人 SANDISK TECHNOLOGIES INC. 发明人 AVILA, CHRIS, NGA YEE;DUSIJA, GAUTAM, ASHOK;CHEN, JIAN;KOCHAR, MRINAL;MANOHAR, ABHIJEET;MAK, ALEXANDER, KWOK-TUNG;LEE, SEUNGPIL;KOH, PAO-LING
分类号 G11C11/56;G11C16/10;G11C16/34 主分类号 G11C11/56
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