发明名称 |
Method of Manufacturing HEMTs with an Integrated Schottky Diode |
摘要 |
An embodiment of a transistor device includes a compound semiconductor material on a semiconductor carrier and a source region and a drain region spaced apart from each other in the compound semiconductor material with a channel region interposed between the source and drain regions. A Schottky diode is integrated with the semiconductor carrier, and contacts extend from the source and drain regions through the compound semiconductor material. The contacts are in electrical contact with the Schottky diode so that the Schottky diode is connected in parallel between the source and drain regions. In another embodiment, the integrated Schottky diode is formed by a region of doped amorphous silicon or doped polycrystalline silicon disposed in a trench structure on the drain side of the device. |
申请公布号 |
US2015011058(A1) |
申请公布日期 |
2015.01.08 |
申请号 |
US201414492505 |
申请日期 |
2014.09.22 |
申请人 |
Infineon Technologies Austria |
发明人 |
Prechtl Gerhard;Ostermaier Clemens;Haeberlen Oliver |
分类号 |
H01L29/66;H01L21/3205;H01L21/283;H01L29/45;H01L29/20 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Villach AT US |