| 发明名称 |
COMPOSITION FOR TIN OXIDE SEMICONDUCTOR AND METHOD OF FORMATION OF TIN OXIDE SEMICONDUCTOR THIN FILM |
| 摘要 |
Provided is a composition for forming tin oxide semiconductor including a tin precursor compound, an antimony precursor compound, and a solvent, according to an aspect of the present disclosure. Also provided is a method of forming a tin oxide semiconductor thin film. The method includes preparing a composition including a tin precursor compound and an antimony precursor compound dissolved in a solvent; disposing the composition on a substrate; and performing a heat treatment on the substrate coated with the composition. |
| 申请公布号 |
US2015011044(A1) |
申请公布日期 |
2015.01.08 |
| 申请号 |
US201314097685 |
申请日期 |
2013.12.05 |
| 申请人 |
Industry-Academic Cooperation Foundation, Yonsei University ;Samsung Display Co., Ltd. |
发明人 |
CHOI Chaun-Gi;MO Yeon-Gon;KIM Hyun-Jae;LIM Hyun-Soo;KIM Si-Joon;JUNG Tae-Soo;RIM You-Seung |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A composition for forming a tin oxide semiconductor, the composition comprising:
a tin precursor compound, an antimony precursor compound, and a solvent for the tin precursor compound and the antimony precursor compound. |
| 地址 |
Seoul KR |
