| 发明名称 |
DIFFUSION BARRIER AND METHOD OF FORMATION THEREOF |
| 摘要 |
A method of forming a device is presented. The method includes providing a structure having first and second regions. A diffusion barrier is formed between at least a portion of the first and second regions. The diffusion barrier comprises cavities that reduce diffusion of elements between the first and second regions. |
| 申请公布号 |
US2015008528(A1) |
申请公布日期 |
2015.01.08 |
| 申请号 |
US201414495886 |
申请日期 |
2014.09.25 |
| 申请人 |
GLOBALFOUNDRIES Singapore Pte. Ltd. |
发明人 |
TAN Shyue Seng;TEO Lee Wee;CHONG Yung Fu;QUEK Elgin;CHU Sanford |
| 分类号 |
H01L29/66;H01L21/762;H01L29/06;H01L29/36;H01L27/088 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a device comprising:
providing a substrate; forming a gate structure over the substrate; forming first and second diffusion regions in the substrate on opposed sides of the gate structure; and forming a diffusion barrier having cavities in the substrate in between the first and second diffusion regions, wherein the diffusion barrier is formed immediately below a channel region which is disposed below the gate structure. |
| 地址 |
Singapore SG |
