| 发明名称 |
Metal Gate Structure |
| 摘要 |
A device comprises a metal gate structure in a trench and over a substrate, wherein the gate structure comprises a first metal sidewall in the trench, wherein the first metal sidewall becomes progressively thinner towards an upper portion of the first metal sidewall, a second metal sidewall in the trench, wherein the second metal sidewall becomes progressively thinner towards an upper portion of the second metal sidewall and a metal bottom layer on a bottom of the trench and between the first metal sidewall and the second metal sidewall. |
| 申请公布号 |
US2015008491(A1) |
申请公布日期 |
2015.01.08 |
| 申请号 |
US201414497114 |
申请日期 |
2014.09.25 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lim Peng-Soon;Ho Tsai-Jung |
| 分类号 |
H01L29/423;H01L21/28;H01L29/49 |
主分类号 |
H01L29/423 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A structure comprising:
a metal layer partially filling a trench of a metal gate structure, wherein the metal layer comprises:
a first metal sidewall;a second metal sidewall; anda metal bottom layer between the first metal sidewall and the second metal sidewall, wherein:
an upper portion of the first metal sidewall is thinner than a lower portion of the first metal sidewall; andan upper portion of the second metal sidewall is thinner than a lower portion of the second metal sidewall. |
| 地址 |
Hsin-Chu TW |
