发明名称 SCANNING ELECTRON MICROSCOPE
摘要 An object of the invention is to provide a scanning electron microscope which forms an electric field to lift up, highly efficiently, electrons discharged from a hole bottom or the like even if a sample surface is an electrically conductive material. To achieve the above object, according to the invention, a scanning electron microscope including a deflector which deflects a scanning position of an electron beam, and a sample stage for loading a sample thereon, is proposed. The scanning electron microscope includes a control device which controls the deflector or the sample stage in such a way that before scanning a beam on a measurement target pattern, a lower layer pattern situated in a lower layer of the measurement target pattern undergoes beam irradiation on another pattern situated in the lower layer.
申请公布号 US2015008322(A1) 申请公布日期 2015.01.08
申请号 US201314379715 申请日期 2013.02.18
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 Yokosuka Toshiyuki;Lee Chahn;Kazumi Hideyuki;Makino Hiroshi;Mizuhara Yuzuru;Isawa Miki;Hatano Michio;Momonoi Yoshinori
分类号 H01J37/28;G01B15/04 主分类号 H01J37/28
代理机构 代理人
主权项 1. A scanning electron microscope including an electron source, an objective lens which condenses an electron beam discharged from the electron source, a deflector which deflects a scanning position of the electron beam, and a sample stage for loading a sample thereon, the scanning electron microscope comprising a control device which controls the deflector or the sample stage in such a way that before scanning a beam on a measurement target pattern, a lower layer pattern situated in a lower layer of the measurement target pattern undergoes beam irradiation on another pattern situated in the lower layer.
地址 Tokyo JP