发明名称 |
SCANNING ELECTRON MICROSCOPE |
摘要 |
An object of the invention is to provide a scanning electron microscope which forms an electric field to lift up, highly efficiently, electrons discharged from a hole bottom or the like even if a sample surface is an electrically conductive material. To achieve the above object, according to the invention, a scanning electron microscope including a deflector which deflects a scanning position of an electron beam, and a sample stage for loading a sample thereon, is proposed. The scanning electron microscope includes a control device which controls the deflector or the sample stage in such a way that before scanning a beam on a measurement target pattern, a lower layer pattern situated in a lower layer of the measurement target pattern undergoes beam irradiation on another pattern situated in the lower layer. |
申请公布号 |
US2015008322(A1) |
申请公布日期 |
2015.01.08 |
申请号 |
US201314379715 |
申请日期 |
2013.02.18 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
Yokosuka Toshiyuki;Lee Chahn;Kazumi Hideyuki;Makino Hiroshi;Mizuhara Yuzuru;Isawa Miki;Hatano Michio;Momonoi Yoshinori |
分类号 |
H01J37/28;G01B15/04 |
主分类号 |
H01J37/28 |
代理机构 |
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代理人 |
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主权项 |
1. A scanning electron microscope including an electron source, an objective lens which condenses an electron beam discharged from the electron source, a deflector which deflects a scanning position of the electron beam, and a sample stage for loading a sample thereon, the scanning electron microscope comprising
a control device which controls the deflector or the sample stage in such a way that before scanning a beam on a measurement target pattern, a lower layer pattern situated in a lower layer of the measurement target pattern undergoes beam irradiation on another pattern situated in the lower layer. |
地址 |
Tokyo JP |