发明名称 |
ETCHING AGENT, ETCHING METHOD AND ETCHING AGENT PREPARATION LIQUID |
摘要 |
The objective of the present invention is to provide: an etching agent for a titanium-based metal on a semiconductor substrate, which is suppressed in decomposition of hydrogen peroxide, has a long service life, and has less need for control of the hydrogen peroxide concentration in the etching agent even in cases where the etching agent is used for a semiconductor substrate that has a titanium-based metal and copper metal or a copper alloy; an etching method; and an etching agent preparation liquid which is mixed with hydrogen peroxide for use. The present invention relates to: an etching agent for a titanium-based metal on a semiconductor substrate which has the titanium-based metal and copper metal or a copper alloy arranged on top of the titanium-based metal, said etching agent being an aqueous solution that contains at least (A) hydrogen peroxide, (B) a phosphonic acid-based chelating agent having a nitrogen atom in the structure, (C) an alkali metal hydroxide and (D) an organic acid having at least one hydroxyl group and at least three carboxyl groups; an etching method which is characterized by using this etching agent; and an etching agent preparation liquid which is mixed with hydrogen peroxide for use. |
申请公布号 |
WO2015002272(A1) |
申请公布日期 |
2015.01.08 |
申请号 |
WO2014JP67812 |
申请日期 |
2014.07.03 |
申请人 |
WAKO PURE CHEMICAL INDUSTRIES, LTD. |
发明人 |
YOKOMIZO TAKAHIRO;TSURUMOTO HIROYUKI;KAKIZAWA MASAHIKO |
分类号 |
H01L21/308;C23F1/38;H01L21/306 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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