SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING SAME

摘要

In the present invention, a method for manufacturing a silicon carbide single-crystal substrate (10) is provided with the following step: a seed crystal (2) that has a principal plane (2a) and comprises silicon carbide, and a silicon carbide raw material (3) are prepared, and by causing the silicon carbide raw material (3) to sublimate while maintaining the temperature gradient between two given points in the silicon carbide raw material (3) at 30°C/cm or less, a silicon carbide single crystal (1) is made to grow on the principal plane (2a). The principal plane (2a) of the seed crystal (2) is the {0001} plane or a plane offset by 10° or less from the {0001} plane and the spiral dislocation density at the principal plane (2a) is 20/cm2 or greater. Due to this configuration, provided are a silicon carbide single-crystal substrate for which crystal quality can be improved and a method for manufacturing the same.