| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor device with reduced failures of semiconductor devices such as shape defect and property defect which may be caused by breakage such as a crack made by external stress, and to reduce failures even during a manufacturing process to improve manufacturing yield of the semiconductor device.SOLUTION: In a semiconductor integrated circuit sandwiched between a pair of a first shock resistance layer and a second shock resistance layer, a semiconductor device comprises shock diffusion layers between the semiconductor integrated circuit and the second shock resistance layer. The shock resistance layer against external stress and the shock diffusion layer for diffusing shock are provided to reduce force applied per unit area of the semiconductor integrated circuit, thereby protecting the semiconductor integrated circuit. Preferably, the shock diffusion layer has a low modulus of elasticity and a high modulus of rupture. |
