发明名称 RADIATION DETECTION ELEMENT USING OXIDE CRYSTAL AND METHOD OF MANUFACTURING OXIDE CRYSTAL
摘要 <p>PROBLEM TO BE SOLVED: To provide a highly-sensitive radiation detection element having a small dark current by using a material having low toxicity and excellent environmental friendliness.SOLUTION: A radiation detection element of the present invention includes: a semiconductor layer comprising a crystal of a tin oxide; and detection means for detecting, as an electric signal, a charge that is generated in the semiconductor layer as the semiconductor layer receives irradiation with a radiation. The resistivity of the semiconductor layer is 10Ωcm or higher.</p>
申请公布号 JP2015004587(A) 申请公布日期 2015.01.08
申请号 JP20130130012 申请日期 2013.06.20
申请人 UNIV OF TOKYO;CANON INC 发明人 NAKAMURA YOSHINOBU;TAKAGI HIDENORI;IWASAKI TATSUYA;SAITO TATSUYA;DEN TORU
分类号 G01T1/24 主分类号 G01T1/24
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