发明名称 |
ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION |
摘要 |
There is provided an actinic ray-sensitive or radiation-sensitive composition containing (α) a compound represented by the formula (αI) capable of generating an acid having a size of 200 Å3 or more in volume and (β) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and the formula (αI) is defined as herein,;and a resist film formed using the actinic ray-sensitive or radiation-sensitive composition, a resist-coated mask blanks coated with the resist film, a resist pattern forming method comprising exposing the resist film and developing the exposed film, a photomask obtained by exposing and developing the resist-coated mask blanks, a method for manufacturing an electronic device, comprising the resist pattern forming method and an electronic device manufactured by the manufacturing method of an electronic device. |
申请公布号 |
US2015010855(A1) |
申请公布日期 |
2015.01.08 |
申请号 |
US201414497560 |
申请日期 |
2014.09.26 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
TSUCHIMURA Tomotaka;TSURUTA Takuya;INASAKI Takeshi;TAKAHASHI Koutarou |
分类号 |
G03F7/027;G03F1/00;G03F1/22;G03F7/20;G03F1/20;G03F7/038;G03F7/004 |
主分类号 |
G03F7/027 |
代理机构 |
|
代理人 |
|
主权项 |
1. An actinic ray-sensitive or radiation-sensitive composition containing (α) a compound represented by the following formula (αI) capable of generating an acid having a size of 200 Å3 or more in volume and (β) a compound capable of generating an acid upon irradiation with an actinic ray or radiation: wherein in formula (αI), each of R1 to R5 represents a hydrogen atom or a substituent, two or more members of R1 to R5 may combine with each other to form a ring, R6 represents a substituent, and A represents a monovalent organic group. |
地址 |
Tokyo JP |