发明名称 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION
摘要 There is provided an actinic ray-sensitive or radiation-sensitive composition containing (α) a compound represented by the formula (αI) capable of generating an acid having a size of 200 Å3 or more in volume and (β) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and the formula (αI) is defined as herein,;and a resist film formed using the actinic ray-sensitive or radiation-sensitive composition, a resist-coated mask blanks coated with the resist film, a resist pattern forming method comprising exposing the resist film and developing the exposed film, a photomask obtained by exposing and developing the resist-coated mask blanks, a method for manufacturing an electronic device, comprising the resist pattern forming method and an electronic device manufactured by the manufacturing method of an electronic device.
申请公布号 US2015010855(A1) 申请公布日期 2015.01.08
申请号 US201414497560 申请日期 2014.09.26
申请人 FUJIFILM CORPORATION 发明人 TSUCHIMURA Tomotaka;TSURUTA Takuya;INASAKI Takeshi;TAKAHASHI Koutarou
分类号 G03F7/027;G03F1/00;G03F1/22;G03F7/20;G03F1/20;G03F7/038;G03F7/004 主分类号 G03F7/027
代理机构 代理人
主权项 1. An actinic ray-sensitive or radiation-sensitive composition containing (α) a compound represented by the following formula (αI) capable of generating an acid having a size of 200 Å3 or more in volume and (β) a compound capable of generating an acid upon irradiation with an actinic ray or radiation: wherein in formula (αI), each of R1 to R5 represents a hydrogen atom or a substituent, two or more members of R1 to R5 may combine with each other to form a ring, R6 represents a substituent, and A represents a monovalent organic group.
地址 Tokyo JP