发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, SENSOR MODULE, AND ELECTRONIC EQUIPMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having high reliability.SOLUTION: A method of manufacturing a semiconductor device 1 comprises the steps of: preparing a semiconductor element 10 having a first surface 10a and electrodes 12 located on the first surface 10a; forming a first resin layer 20 on the first surface 10a including the electrodes 12; forming a first metal layer 31 electrically connected to the electrodes 12 on a third surface 23 of the first resin layer 20 opposite to a second surface 22 facing the semiconductor layer 10; forming a second resin layer 41 covering a sixth surface 35 connecting a fourth surface 33 of the first metal layer 31 facing the first resin layer 20 and a fifth surface 34 opposite to the fourth surface 33 and the fifth surface 34 of the first metal layer 31; providing openings 42 exposing the fifth surface 34 of the first metal layer 31 on the second resin layer 41; and forming second metal layers 51 in the openings 42 by electroless plating with the second resin layer 41 covering the sixth surface 35 of the first metal layer 31. |
申请公布号 |
JP2015005759(A) |
申请公布日期 |
2015.01.08 |
申请号 |
JP20140156319 |
申请日期 |
2014.07.31 |
申请人 |
SEIKO EPSON CORP |
发明人 |
HANAOKA TERUNAO;SHINDO AKINORI;YAMAZAKI YASUO;CHIBA SEIICHI;TOODA HISAYUKI;KOJIMA SHUJI |
分类号 |
H01L23/12;G01C19/5628;H01L21/3205;H01L21/768;H01L23/522;H01L25/065;H01L25/07;H01L25/18 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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