发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, SENSOR MODULE, AND ELECTRONIC EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having high reliability.SOLUTION: A method of manufacturing a semiconductor device 1 comprises the steps of: preparing a semiconductor element 10 having a first surface 10a and electrodes 12 located on the first surface 10a; forming a first resin layer 20 on the first surface 10a including the electrodes 12; forming a first metal layer 31 electrically connected to the electrodes 12 on a third surface 23 of the first resin layer 20 opposite to a second surface 22 facing the semiconductor layer 10; forming a second resin layer 41 covering a sixth surface 35 connecting a fourth surface 33 of the first metal layer 31 facing the first resin layer 20 and a fifth surface 34 opposite to the fourth surface 33 and the fifth surface 34 of the first metal layer 31; providing openings 42 exposing the fifth surface 34 of the first metal layer 31 on the second resin layer 41; and forming second metal layers 51 in the openings 42 by electroless plating with the second resin layer 41 covering the sixth surface 35 of the first metal layer 31.
申请公布号 JP2015005759(A) 申请公布日期 2015.01.08
申请号 JP20140156319 申请日期 2014.07.31
申请人 SEIKO EPSON CORP 发明人 HANAOKA TERUNAO;SHINDO AKINORI;YAMAZAKI YASUO;CHIBA SEIICHI;TOODA HISAYUKI;KOJIMA SHUJI
分类号 H01L23/12;G01C19/5628;H01L21/3205;H01L21/768;H01L23/522;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L23/12
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