| 摘要 |
PROBLEM TO BE SOLVED: To improve the accuracy of alignment in photomasking which is performed when patterning a film on the rear side of an SOI substrate, in a semiconductor device using the SOI substrate.SOLUTION: In a photolithography process in which a rear-side electrode RE is formed by patterning a metal film on the rear side of an SOI substrate, a mark composed of a through-via TSV penetrating a BOX film BX is observed from the rear side of the SOI substrate so as to perform the alignment for photomasking in the photolithography process, thereby improving the accuracy of alignment in the photomasking. |
