PATTERN FORMATION METHOD, LITHOGRAPHY APPARATUS, LITHOGRAPHY SYSTEM, AND ARTICLE MANUFACTURING METHOD

摘要

A pattern forming method includes: a first step of forming a first pattern to define a first shot arrangement; and a second step of performing an imprint process, thereby forming a second pattern on the imprint material on the first pattern and defining a second shot arrangement. In the second step, the second shot arrangement is defined so as to reduce an overlay error between the first and second shot arrangements by deforming the mold. In the first step, based on information of the estimated second shot arrangement definable on the substrate when the second step is performed after the second pattern formed on the mold is amended by deforming the mold, the first pattern is formed to make an overlay error between the first and second shot arrangements fall within an allowable range.

主权项

1. A method of forming a pattern on a substrate, the method comprising:
a first step of forming a first pattern in each shot region on the substrate to define a first shot arrangement; and a second step of performing, in every at least one shot region in the first shot arrangement defined in the first step, an imprint process of curing an imprint material while bringing the imprint material on the substrate and a mold into contact with each other, thereby forming a second pattern on the imprint material on the first pattern and defining a second shot arrangement, wherein in the second step, the second shot arrangement is defined so as to reduce an overlay error between the first shot arrangement and the second shot arrangement by deforming the mold, and wherein in the first step, based on information of the estimated second shot arrangement definable on the substrate when the second step is performed after the second pattern formed on the mold is amended by deforming the mold, the first pattern is formed to make an overlay error between the first shot arrangement and the second shot arrangement fall within an allowable range.