| 发明名称 |
SPUTTERING TARGET, SPUTTERING TARGET MANUFACTURING METHOD, BARIUM TITANATE THIN FILM MANUFACTURING METHOD, AND THIN FILM CAPACITOR MANUFACTURING METHOD |
| 摘要 |
<p>A sputtering target includes a conductive barium titanate sintered material with generation density of crystal grain aggregate (12) having a grain diameter of 10μm or more on a cleavage surface of less than 0.2 piece/cm2.</p> |
| 申请公布号 |
KR20150003155(A) |
申请公布日期 |
2015.01.08 |
| 申请号 |
KR20147023695 |
申请日期 |
2013.02.25 |
| 申请人 |
SONY CORPORATION |
发明人 |
ADACHI KIWAMU;YANAGAWA SHUSAKU |
| 分类号 |
C23C14/34;H01G4/12;H01L21/822 |
主分类号 |
C23C14/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
