| 摘要 |
A novel semiconductor structure and method for forming the same. The semiconductor structure includes (a) a gate layer, (b) a gate dielectric layer on the gate layer, (c) a semiconductor layer on the gate dielectric layer. The semiconductor layer is electrically insulated from the gate layer by the gate dielectric layer. The semiconductor layer includes (i) first and second channel regions in direct physical contact with the gate dielectric layer and (ii) first, second, and third source/drain regions. The first channel region is disposed between and in direct physical contact with the first and second source/drain regions. The second channel region is disposed between and in direct physical contact with the second and third source/drain regions. The first, second, and third source/drain regions are directly on the gate layer.
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