| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes: a substrate; an insulator layer provided on the substrate; a first transistor provided on the insulator layer; a semiconductor layer including a plurality of impurity regions of a first conduction type, the impurity regions forming a part of the first transistor; a heat dissipation layer; a thermal conductive layer linking the semiconductor layer and the heat dissipation layer; and an interruption structure configured to interrupt a flow of a current between the first transistor and the thermal conductive layer. |
| 申请公布号 |
US2015008525(A1) |
申请公布日期 |
2015.01.08 |
| 申请号 |
US201414310689 |
申请日期 |
2014.06.20 |
| 申请人 |
Sony Corporation |
发明人 |
Fukuzaki Yuzo;Ammo Hiroaki |
| 分类号 |
H01L23/34;H01L27/088 |
主分类号 |
H01L23/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate; an insulator layer provided on the substrate; a first transistor provided on the insulator layer; a semiconductor layer including a plurality of impurity regions of a first conduction type, the impurity regions forming a part of the first transistor; a heat dissipation layer; a thermal conductive layer linking the semiconductor layer and the heat dissipation layer; and an interruption structure configured to interrupt a flow of a current between the first transistor and the thermal conductive layer. |
| 地址 |
Tokyo JP |
