发明名称 Integrated circuit device structure and fabrication method thereof
摘要 An integrated circuit device structure, in which, a diffusion region is formed in a substrate, an extension conductor structure is contacted with the diffusion region and extended externally to a position along a surface of the substrate, the position is outside the diffusion region, another extension conductor structure is contacted with the diffusion region, a jumper conductor structure is disposed over the substrate and on these two extension conductor structures for electrically connecting these two extension conductor structures, the jumper conductor structure may be over one or more gate structures, a contact structure penetrates through a dielectric layer to be contacted with the jumper conductor structure, and a metal conductor line is contacted with the contact structure.
申请公布号 US2015008524(A1) 申请公布日期 2015.01.08
申请号 US201313933141 申请日期 2013.07.02
申请人 UNITED MICROELECTRONICS CORP. 发明人 Hung Ching-Wen;Huang Chih-Sen
分类号 H01L27/088;H01L29/66 主分类号 H01L27/088
代理机构 代理人
主权项 1. An integrated circuit device structure, comprising: a substrate; a first diffusion region formed in the substrate; a first gate structure formed over the substrate and spanning the first diffusion region; a first extension conductor structure formed over the substrate and contacted with the first diffusion region, wherein the first extension conductor structure is extended to a position along a surface of the substrate, wherein the position is outside the diffusion region; a second extension conductor structure formed over the substrate; a jumper conductor structure disposed over the substrate and on the first extension conductor structure and on the second extension conductor structure to electrically connect the first extension conductor structure and the second extension conductor structure; a dielectric layer formed over the substrate, the first gate structure, the first extension conductor structure, the second extension conductor structure and the jumper conductor structure; a first contact structure penetrating the dielectric layer to be contacted with the jumper conductor structure; and a first metal conductor line contacted with the first contact structure.
地址 Hsin-Chu City TW