Semiconductor Device with Vertical Transistor Channels and a Compensation Structure

摘要

A semiconductor device includes transistor cells with vertical channels perpendicular to a first surface of a semiconductor portion. A buried compensation structure in the semiconductor portion between the transistor cells and a second surface of the semiconductor portion parallel to the first surface includes first areas and second areas. The first and second areas are alternatingly arranged along a lateral direction parallel to the first surface. A contiguous impurity layer of a first conductivity type separates the transistor cells from the buried compensation structure.

主权项

1. A semiconductor device, comprising:
transistor cells having vertical channels perpendicular to a first surface of a semiconductor portion; a buried compensation structure between the transistor cells and a second surface of the semiconductor portion parallel to the first surface, the compensation structure comprising first areas and second areas alternatingly arranged along a lateral direction parallel to the first surface; and a contiguous impurity layer of a first conductivity type separating the transistor cells and the compensation structure.