NON-VOLATILE MEMORY STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

A non-volatile memory structure includes a substrate, a gate electrode formed on the substrate, conductive spacers respectively formed on two sides of the gate electrode, and an oxide-nitride-oxide (ONO) structure having an inverted T shape formed on the substrate. The gate electrode includes a gate conductive layer and a gate dielectric layer. The ONO structure includes a base portion and a body portion. The base portion of the ONO structure is sandwiched between the gate electrode and the substrate, and between the conductive spacer and the substrate. The body portion of the T-shaped ONO structure is upwardly extended from the base portion and sandwiched between the gate electrode and the conductive spacer.

主权项

1. A non-volatile memory structure, comprising:
a substrate; a gate electrode formed on the substrate, the gate electrode comprising a gate conductive layer and a gate dielectric layer; conductive spacers respectively formed on two sides of the gate electrode; and an oxide-nitride-oxide (ONO) structure having an inverted T shape formed on the substrate, the ONO structure comprising:
a base portion sandwiched between the gate electrode and the substrate, and between the conductive spacer and the substrate; anda body portion upwardly extended from the base portion, the body portion being sandwiched between the gate electrode and the conductive spacer.