SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device comprises a substrate and first and second stress-generating epitaxial regions on the substrate and spaced apart from each other. A channel region is on the substrate and positioned between the first and second stress-generating epitaxial regions. A gate electrode is on the channel region. The channel region is an epitaxial layer, and the first and second stress-generating epitaxial regions impart a stress on the channel region.

主权项

1. A semiconductor device comprising:
a substrate; first and second stress-generating epitaxial regions on the substrate and spaced apart from each other; a channel region on the substrate and positioned between the first and second stress-generating epitaxial regions, the channel region being an epitaxial layer grown under stress of the first and second stress-generating epitaxial regions; and a gate electrode on the channel region.