发明名称 |
Semiconductor Device and Method of Manufacturing the Same |
摘要 |
An object of the present invention is to provide a semiconductor device having high operation characteristic and reliability. The measures taken are: A pixel capacitor is formed between an electrode comprising anodic capable material over an organic resin film, an anodic oxide film of the electrode and a pixel electrode above. Since the anodic oxide film is anodically oxidized by applied voltage per unit time at 15V/min, there is no wrap around on the electrode, and film peeling can be prevented. |
申请公布号 |
US2015008440(A1) |
申请公布日期 |
2015.01.08 |
申请号 |
US201414493686 |
申请日期 |
2014.09.23 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
MURAKAMI Satoshi;YAMAZAKI Shunpei;KOYAMA Jun;OSAME Mitsuaki;TANAKA Yukio;HIRAKATA Yoshiharu |
分类号 |
H01L27/12;H01L29/45;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Kanagawa-ken JP |