THIN FILM TRANSISTOR WITH A CURRENT-INDUCED CHANNEL

摘要

A thin film transistor (TFT) includes a hole transport layer having a first side and a second side and an electron transport layer having a first side and a second side. The first side of the electron transport layer is directly interfaced to the second side of the hole transport layer. The electron transport layer includes a material having greater ionization potential and greater electron affinity than the hole transport layer, thereby forming a hole barrier and an electron barrier at the junction between the electron transport layer and the hole transport layer. A channel in the TFT is created by current injected into the electron transport layer from a gate electrode rather than by an electrostatic field generated by voltage applied to the gate electrode. The accumulated charge density in the channel of the TFT can be significantly larger than what can be generated through field effect principle, therefore a much lower gate voltage is needed than in a conventional TFT.

主权项

1. A semiconductor device, comprising:
a hole transport layer having a first side and a second side, the hole transport layer comprising a material in which hole mobility is greater than the electron mobility and having a first ionization potential and a first electron affinity; an electron transport layer having a first side and a second side, the electron transport layer comprising a material in which electron mobility is greater than hole mobility and having a second ionization potential and a second electron affinity, the second ionization potential being greater than the first ionization potential and the second electron affinity being greater than the first electron affinity, wherein the first side of the electron transport layer is directly interfaced to the second side of the hole transport layer; a first electrode directly interfaced to the first side of the hole transport layer; a second electrode directly interfaced to the first side of the hole transport layer and physically separated from the first electrode; and a gate electrode directly interfaced to the second side of the electron transport layer.