发明名称 SLURRY COMPOSITION AND METHOD OF SUBSTRATE POLISHING
摘要 Slurry composition and a method of substrate polishing used in chemical mechanical polishing (CMP). The present invention concerns a slurry composition containing a polishing agent and a water soluble polymer. The slurry composition contains a water soluble polymer that has a solubility parameter in the range of 9.0 to 14.0, and may contain hetero atoms, at a level sufficient to lower the polishing rate near the edges of the polished substrate defined as the region within 1 mm of the outer edge of the polished substrate to a level below the mean polishing rate of the polished substrate. The water soluble polymer may have a mean molecular weight in the range of 200 to about 3,000,000, and the mean molecular weight may be in the range of 200 to 1 10,000 if hetero atoms are present in the main-chain structure and the SP value is under 9.5.
申请公布号 WO2014174365(A3) 申请公布日期 2015.01.08
申请号 WO2014IB00703 申请日期 2014.04.25
申请人 NIHON CABOT MICROELECTRONICS K.K. 发明人 KITAMURA, HIROSHI;MASUDA, TSUYOSHI;MATSUMURA, YOSHIYUKI
分类号 C09D5/00;C09D7/00;C09G1/00 主分类号 C09D5/00
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