发明名称 |
SLURRY COMPOSITION AND METHOD OF SUBSTRATE POLISHING |
摘要 |
Slurry composition and a method of substrate polishing used in chemical mechanical polishing (CMP). The present invention concerns a slurry composition containing a polishing agent and a water soluble polymer. The slurry composition contains a water soluble polymer that has a solubility parameter in the range of 9.0 to 14.0, and may contain hetero atoms, at a level sufficient to lower the polishing rate near the edges of the polished substrate defined as the region within 1 mm of the outer edge of the polished substrate to a level below the mean polishing rate of the polished substrate. The water soluble polymer may have a mean molecular weight in the range of 200 to about 3,000,000, and the mean molecular weight may be in the range of 200 to 1 10,000 if hetero atoms are present in the main-chain structure and the SP value is under 9.5. |
申请公布号 |
WO2014174365(A3) |
申请公布日期 |
2015.01.08 |
申请号 |
WO2014IB00703 |
申请日期 |
2014.04.25 |
申请人 |
NIHON CABOT MICROELECTRONICS K.K. |
发明人 |
KITAMURA, HIROSHI;MASUDA, TSUYOSHI;MATSUMURA, YOSHIYUKI |
分类号 |
C09D5/00;C09D7/00;C09G1/00 |
主分类号 |
C09D5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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