POWER DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided are a power device with an improved function of a field stop layer, and a method for fabricating the same. The power device according to the present invention includes: a first field stop layer which is formed based on a semiconductor substrate having a first conductivity type; a second field stop layer which is formed on the first field stop layer and has a first conductivity type having a higher impurity concentration part compared to the first field stop layer; a drift region which is formed on the second field stop layer and has a first conductivity type having a lower impurity concentration compared to the first field stop layer; power device cells formed on the upper part of the drift region; and a collector region formed on the lower part of the first field stop layer. The second field stop layer comprises a first region having a first impurity concentration and a second region having a second concentration which is higher than the first impurity concentration.