| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in electric characteristics and having a reliable thin-film transistor, and to provide a method of manufacturing the semiconductor device without causing variation.SOLUTION: An oxide semiconductor film containing In, Ga, and Zn is used as a semiconductor layer, and an inverted stagger type (bottom gate structure) thin-film transistor is included. In the inverted stagger type thin-film transistor, a buffer layer is formed between the semiconductor layer and a source electrode layer and a drain electrode layer. The buffer layer which has carrier concentration higher than that of the semiconductor layer and contains In, Ga, and Zn, is provided intentionally between the source electrode layer and the drain electrode layer and the semiconductor layer, to form an ohmic contact. |
