发明名称 DATA PROTECTING METHOD, MEMORY STORAGE DEVICE, AND MEMORY CONTROLLER
摘要 A data protecting method, a memory storage device, and a memory controller are provided for a rewritable non-volatile memory module. The data protecting method includes: generating a first error correcting code by using data stored in first memory cells of a plurality of memory cells. The first memory cells are located on first word lines and first bit lines. Among the memory cells located on each of the first bit lines, only one of the memory cells stores the data used to generate the first error correcting code. Accordingly, the data in the memory cells is efficiently protected.
申请公布号 US2015012799(A1) 申请公布日期 2015.01.08
申请号 US201314038778 申请日期 2013.09.27
申请人 PHISON ELECTRONICS CORP. 发明人 Yeh Chih-Kang
分类号 G06F11/10 主分类号 G06F11/10
代理机构 代理人
主权项 1. A data protecting method for controlling a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of word lines, a plurality of bit lines, and a plurality of memory cells, each of the memory cells is located on one of the word lines and one of the bit lines, and the memory cells form a plurality of physical erasing units, the data protecting method comprising: generating a first error correcting code by using data stored in a plurality of first memory cells of the memory cells, wherein the first memory cells are located on a plurality of first word lines of the word lines and a plurality of first bit lines of the bit lines, wherein among the memory cells located on each of the first bit lines, only one of the memory cells stores the data used to generate the first error correcting code.
地址 Miaoli TW