BIPOLAR TRANSISTOR HAVING SINKER DIFFUSION UNDER A TRENCH

摘要

A bipolar transistor includes a substrate having a semiconductor surface, a first trench enclosure and a second trench enclosure outside the first trench enclosure both at least lined with a dielectric extending downward from the semiconductor surface to a trench depth, where the first trench enclosure defines an inner enclosed area. A base and an emitter formed in the base are within the inner enclosed area. A buried layer is below the trench depth including under the base. A sinker diffusion includes a first portion between the first and second trench enclosures extending from a topside of the semiconductor surface to the buried layer and a second portion within the inner enclosed area, wherein the second portion does not extend to the topside of the semiconductor surface.

主权项

1. A bipolar transistor, comprising:
a substrate having a semiconductor surface; a first trench enclosure and a second trench enclosure outside said first trench enclosure both at least lined with a dielectric extending downward from a topside of said semiconductor surface to a trench depth, said first trench enclosure defining an inner enclosed area; a base and an emitter formed in said base within said inner enclosed area; a buried layer below said trench depth including under said base, and a sinker diffusion including a first portion between said first and said second trench enclosures extending from said topside of said semiconductor surface to said buried layer and a second portion within said inner enclosed area, wherein said second portion does not extend to said topside of said semiconductor surface.