Compensated Photonic Device Structure And Fabrication Method Thereof

摘要

Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. In one aspect, a photonic device may include a substrate and a functional layer disposed on the substrate. The substrate may be made of a first material and the functional layer may be made of a second material that is different from the first material. The photonic device may also include a compensation region formed at an interface region between the substrate and the functional layer. The compensation region may be doped with compensation dopants such that a first carrier concentration around the interface region of function layer is reduced and a second carrier concentration in a bulk region of functional layer is reduced.

主权项

1. A photonic device, comprising:
a silicon-based substrate; a first contact layer heavily doped with first-type dopants and disposed on the substrate; a multiplication layer disposed on the first contact layer; a charge layer doped with second-type dopants and disposed on the multiplication layer; a germanium (Ge) absorption layer disposed on the charge layer; a second contact layer heavily doped with the second-type dopants and disposed on the Ge absorption layer; one or more anti-reflection layers disposed on the second contact layer; and a compensation region formed at an interface region between the charge layer and the Ge absorption layer, the compensation region doped with compensation dopants such that a first carrier concentration around the interface region of the Ge absorption layer is reduced and a second carrier concentration in a bulk region of the Ge absorption layer is reduced.