| 摘要 |
Provided is an impurity-diffusing composition comprising (A) a polysiloxane represented by general formula (1) and (B) an impurity-diffusing component. (In the formula, R1 is a C6-15 aryl group, and each of multiple R1 can be the same or different. R2 is either a hydroxyl group, C1-6 alkyl group, C1-6 alkoxy group, C2-10 alkenyl group, C2-6 acyl group, or C6-15 aryl group, and each of multiple R2 can be the same or different. R3 and R4 are each a hydroxyl group, C1-6 alkyl group, C1-6 alkoxy group, C2-10 alkenyl group, or C2-6 acyl group, and can be the same or different. n:m = 95:5 to 25:75.) The impurity-diffusing composition has excellent printability and impurity-diffusing capability on a semiconductor substrate, and resists cracking during the calcining and diffusing steps to form a calcined film having, after calcining, sufficient masking performance against other impurity-diffusing agents. |
