| 摘要 |
A plurality of insulated-gate semiconductor elements connected in parallel are driven in parallel in a well-balanced manner. To turn on one (2a) of a plurality of IGBTs connected in parallel, while driving the gate thereof with a constant current from a constant-current circuit (5) containing a constant-current source (8) and a current-mirror circuit (9), a drive voltage (Vol) for driving the gate of the IGBT (2a) is outputted to the constant-current source (8) and the current-mirror circuit (9) by a voltage-controlling circuit (10), said drive voltage (Vol) being a variable voltage that depends on the difference (&Dgr;V) between a reference voltage (Vref0) and a temperature-dependent diode voltage (Vf) outputted by an integrated temperature-detecting diode (12) in the IGBT (2a). As a result, in addition to the fact that the use of constant-current driving reduces losses and noise when the IGBTs are turned on, the turn-on times of the IGBTs and the amounts of current that flow therethrough can be made uniform regardless of gate-threshold-voltage variability due to differences between the individual IGBTs (2a). |
