| 摘要 |
<p>A semiconductor element encompasses a base-body region (21) of p-type; a charge-generation buried region (23) of a n-type, being buried in a part of an upper portion of the base-body region (21) so as to implement a photodiode (D1) together with the base-body region (21), configured to create a first potential valley (PW1) in the base-body region (21); an accumulation region (24) of n-type, being buried in a part of the upper portion of the base-body region (21), separately from the charge-generation buried region (23), configured to create a second potential valley (PW2) deeper than the first potential valley (PW1); a transfer-gate insulation film (33) provided on a surface of the base-body region (21) between the charge-generation buried region (23) and the accumulation region (24); a transfer-gate electrode (31) provided on the transfer-gate insulation film (33), configured to control a potential of a transfer channel formed in the base-body region (21) between the charge-generation buried region (23) and the accumulation region (24); and a recessed-potential creation means configured to create a stair-like-shaped potential barrier for electronic shuttering. It is possible to achieve the perfect transfer of charges and it is possible to store a sufficient number of the accumulation charges.</p> |
