| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing system where sticking of deposits to the inner wall of a chamber or a in-chamber member, such as an insulator, can be prevented. <P>SOLUTION: The plasma processing system performing plasma processing on a wafer W by generating plasma between an upper electrode 34 and a lower electrode 16 comprises a DC power supply 50 for applying a DC voltage to the upper electrode 34, such that the absolute value of the self-bias voltage V<SB>dc</SB>on the surface becomes large enough to attain predetermined sputtering effect for the surface, or reduced plasma is formed on the counter electrode side of an application electrode, by increasing the thickness of a plasma sheath in the application electrode, or a substrate to be processed is irradiated with electrons generated in the vicinity of the application electrode, or the plasma potential is controlled to a desired value, or the plasma density is increased, or the distribution of plasma density becomes uniform to the extent of obtaining the desired etching uniformity. <P>COPYRIGHT: (C)2007,JPO&INPIT |
