| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a p-type ZnO-based crystal of high quality, which is excellent in controllability of a p-type dopant concentration. SOLUTION: The method for growing a p-type ZnO-based crystal of high quality comprises a single-crystal growing process of growing a ZnO-based crystal layer using an organic metal compound not containing an oxygen atom in the molecular structure and a polar oxygen material by a MOCVD method. The single-crystal growing process includes a step of supplying TBP (Tertiary Butyl Phosphine). COPYRIGHT: (C)2012,JPO&INPIT |
