发明名称 Semiconductor device and fabrication method therefor
摘要 <p>A semiconductor device (101) includes a support plate (30), a semiconductor element (10), and a conductive post (40) formed by a columnar conductor having a first end portion (41a) at one end and a second end portion (42a) at the other end. The support plate (30) has a plurality of holes (30b) formed therein, and a conductor (33) formed on a wall surface of the hole (30b). The second end portion (42a) of the conductive post (40) is connected to electrodes (12 to 14) of the semiconductor element (10) via conductive materials (72a to 72c). A side surface of the conductive post (40) is fixed to the wall surface of the hole (30b) deformed by pressing force of the conductive post (40) on a side closer to the first end portion (41a) than the second end portion (42a).</p>
申请公布号 EP2339625(B1) 申请公布日期 2015.01.07
申请号 EP20100192380 申请日期 2010.11.24
申请人 IBIDEN CO., LTD. 发明人 TSUKADA, KIYOTAKA;MURAKI, TETSUYA;YAMASHITA, ATSUNARI;TOMIDA, YOSHITOMO
分类号 H01L23/498;H01L23/48 主分类号 H01L23/498
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