| 摘要 |
<p>A solid-state imaging device, in which the transfer efficiency of charges is good, and the structure of the pixel is simple, and a high resolution and a high-speed operation are possible is disclosed, which encompasses a semiconductor region (21) of p-type; a buried region (23) of n-type, configured to serve as a photodiode together with the semiconductor region (21); a extraction region of n-type, configured to extract charges generated by the photodiode from the buried region (23), having higher impurity concentration than the buried region (23); a read-out region (28) of n-type, configured to accumulate charges, which are transferred from the buried region (23) having higher impurity concentration than the buried region (23); and a potential gradient changing means (31, 32), configured to control a potential of the channel, and to change a potential gradient of a potential profile from the buried region (23) to the read-out region (28) and a potential gradient of a potential profile from the buried region (23) to the extraction region, so as to control the transferring/ extraction of charges.</p> |
