| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon substrate having a plurality of fine through holes which has metal film with a superior adhesion property formed in the inside of through holes and on the flat portion of the substrate by a simple technology not dependent on a semiconductor process, making the substrate suitable for high-density packaging uses. SOLUTION: A clean silicon surface is exposed on the flat portion and in the inside of through holes of a silicon substrate by subjecting the substrate to a pre-plating process. Nickel displacement plating and electroless copper plating are applied in that order (S4), and thereby the whole surface of the inside walls of all through holes and the whole surface or part of the principal surface of the silicon substrate are directly covered. This way, a silicon substrate including metal film which exhibits a superior adhesion property and good conductivity is produced. COPYRIGHT: (C)2012,JPO&INPIT |
