发明名称 高周波スパッタリング装置
摘要 Apparatus for sputtering comprises a vacuum chamber, at least one first electrode having a first surface arranged in the vacuum chamber, a counter electrode having a surface arranged in the vacuum chamber and a RF generator. The RF generator is configured to apply a RF electric field across the at least one first electrode and the counter electrode so as to ignite a plasma between the first electrode and the counter electrode. The counter electrode comprises at least two cavities in communication with the vacuum chamber. the cavities each have dimensions such that a plasma can be formed in the cavity.
申请公布号 JP5648190(B2) 申请公布日期 2015.01.07
申请号 JP20110541712 申请日期 2009.12.21
申请人 发明人
分类号 C23C14/34;C23C14/35;H01L21/285 主分类号 C23C14/34
代理机构 代理人
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