| 摘要 |
The present disclosure concerns a self-referenced magnetic random access memory-based ternary content addressable memory (MRAM-based TCAM) cell (1) comprising a first and second magnetic tunnel junction (2, 2'); a first and second conducting strap (7, 7') adapted to pass a heating current (31) in the first and second magnetic tunnel junction (2, 2'), respectively; a conductive line (3) electrically connecting the first and second magnetic tunnel junctions (2, 2') in series; a first current line (4) for passing a first field current (41) to selectively write a first write data to the first magnetic tunnel junction (2); and a second current line (4') for passing a write current (31, 41') to selectively write a second write data to the second magnetic tunnel junction (2'), such that three distinct cell logic states can be written in the MRAM-based TCAM cell (1). |
