发明名称 |
Post-deposition treatment to enhance properties of Si-O-C low k films |
摘要 |
A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally takes place in a reducing environment while heating the substrate. The densification treatment is particularly suitable for silicon-oxygen-carbon low dielectric constant films that have been deposited at low temperature.
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申请公布号 |
US7326657(B2) |
申请公布日期 |
2008.02.05 |
申请号 |
US20040990251 |
申请日期 |
2004.11.15 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
XIA LI-QUN;GAILLARD FREDERIC;YIEH ELLIE;LIM TIAN H. |
分类号 |
H01L21/31;C23C16/02;C23C16/40;C23C16/56;H01L21/3105;H01L21/314;H01L21/316 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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