发明名称 THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DIODE DISPLAY
摘要 <p>The present invention provides a thin film transistor which includes: a first gate electrode which is located on a substrate, a first oxide semiconductor layer which is located on the first gate electrode, an insulation layer which is located on the first oxide semiconductor layer and includes a first contact hole to expose a first part of the first oxide semiconductor layer corresponding to one end of the first gate electrode and a second contact hole to expose a second part of the first oxide semiconductor layer corresponding to the other end of the first gate electrode, a first source electrode which is located on the insulation layer and is in contact with one side of the first part of the first oxide semiconductor layer through the first contact hole, and a first drain electrode which is located on the insulation layer and is in contact with one side of the second part of the first oxide semiconductor layer through the second contact hole.</p>
申请公布号 KR20150002136(A) 申请公布日期 2015.01.07
申请号 KR20130075572 申请日期 2013.06.28
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 CHOI, CHAUN GI;KIM, SUN KWANG;YANG, HUI WON;PARK, SANG IL
分类号 H01L29/786;H01L21/336;H01L51/50 主分类号 H01L29/786
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