| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To further suppress characteristic change of a semiconductor device caused by stress from a package in a semiconductor device packaged by molding. <P>SOLUTION: The whole of Si-LSIs 202a and 202b are covered with an SiO<SB POS="POST">2</SB>film 205 and an SiN film 206, and a magnetic sensing part of a hall element 208 comprising a compound semiconductor device is formed on an Si substrate 201 surface between the two Si-LSIs 202a and 202b. The hall element 208 and the Si-LSIs 202a and 202b are connected with each other via a metal wire 210, and then, an SiN film 211 and an SiO<SB POS="POST">2</SB>film 212 are formed to flatten the surface, and an Al wire 213 is formed thereon. An etching solution injection hole 214 is formed in a region overlapping with the hall element 208 of the Al wire 213 as viewed from an upper surface of the substrate. An etching solution is injected from the etching solution injection hole 214 to remove the SiO<SB POS="POST">2</SB>film 212 below the Al wiring 213 and form a hollow part 215. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
