发明名称 半導体記憶装置
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor memory device having multi-bank constitution in which high integration and stability of operation are achieved. SOLUTION: The device has a plurality of memory array regions and a plurality of word selection regions which are alternately arranged along a first direction, the plurality of memory array regions are provided with a plurality of word lines provided along the first direction respectively, a plurality of bit lines provided along a second direction being orthogonal to the first direction, and a plurality of memory cells provided corresponding to cross parts of the plurality of word lines and the plurality of bit lines, the word line selecting circuits are provided in the word line selection regions corresponding to word lines extended to one side out of memory array regions of both sides being adjacent to respective word line selection regions and respective word lines extended to the other, respective word line selection timings for respective memory array regions are controlled independently. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP5647801(B2) 申请公布日期 2015.01.07
申请号 JP20100046513 申请日期 2010.03.03
申请人 发明人
分类号 G11C11/407;G11C11/401;G11C11/41 主分类号 G11C11/407
代理机构 代理人
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