| 摘要 |
Provided is an SOFC, including a fuel electrode (20), a thin-plate-like interconnector (30) provided on the fuel electrode and formed of a conductive ceramics material, and a conductive film (70) formed on a surface of the interconnector (30) opposite to the fuel electrode (20). The conductive film (70) is formed of an N-type semiconductor (e.g., LaNiO 3 ). The N-type semiconductor generally has the property of exhibiting a smaller conductivity (a current hardly flows) at higher temperature. Therefore, a portion with a higher current density (thus, a portion with higher temperature) in the conductive film (70) in the vicinity of the interconnector (30) has a smaller conductivity (a current hardly flows). By virtue of this action, even though a "fluctuation in current density of a current flowing through the interconnector (30) and an area in the vicinity thereof' occurs for some reasons, the fluctuation can be suppressed. |
