发明名称 |
STRUCTURE AND METHOD FOR STRAIN-RELIEVED TSV |
摘要 |
A semiconductor die including strain relief for through substrate vias (TSVs). A method for strain relief of TSVs includes defining a through substrate via cavity in a substrate. The method also includes depositing an isolation layer in the cavity. The method further includes filling the cavity with a conductive material. The method also includes removing a portion of the isolation layer to create a recessed portion. |
申请公布号 |
EP2820671(A1) |
申请公布日期 |
2015.01.07 |
申请号 |
EP20130708323 |
申请日期 |
2013.02.26 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
RAMACHANDRAN, VIDHYA;GU, SHIQUN |
分类号 |
H01L21/768;H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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