| 摘要 |
A rectifier MESFET includes an N-channel MESFET having its gate connected to its source, and at the same current density having a voltage drop lower than the gate Schottky diode. A Schottky diode may be connected in parallel with the N-channel device to provide over current protection. A Zener may also be connected in parallel to provide reverse voltage protection. A second N-channel device may be connected in parallel. The addition of the second N-channel provides two different operational mode: synchronous rectification where the majority of current flows through the low resistance first N-channel device and asynchronous rectification where the majority of current flows through the somewhat higher resistance first N-channel device.
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