| 摘要 |
A structure (10, 50) subjected to stresses that can lead to structural failure. The structure (10, 50) includes first and second conductive layers (16, 18, 56,58) and an intermediate layer (20, 60) therebetween formed of a dielectric, semiconductive, or resistive material, such that the first, second, and intermediate layers (16, 18, 20, 56, 58, 60) form in combination an electrical element, namely, a capacitive or resistive element. The electrical element is located within the structure (10, 50) so as to be physically responsive to transitory and permanent distortions of the structure (10, 50) resulting from extrinsic and intrinsic sources. The structure (10, 50) further includes applying an electrical potential to at least one of the first and second conductive layers (16, 18, 56, 58) so as to generate an electrical signal from the electrical element, sensing changes in the electrical signal generated by the electrical element in response to the electrical element physically responding to the transitory and permanent distortions, and transmitting the changes in the electrical signal to a location remote from the structure (10, 50).
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